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The race to build smaller and more efficient computer chips and batteries faces major challenges in materials organization.   Current smart phones, for example, are based upon layered  (“2-D”) materials, but nanoscale designs that utilize 3-D architecture are envisioned.  To access this third dimension in materials organization,  scientists must find ways to direct the flow of atoms before locking in structure.

  Interacting electron ripples provide clues to superconductivity A theoretical prediction is confirmed by atomic-scale microscopy

The Renewable Energy MRSEC and the Adams and Meeker County Public Schools are collaborating on several partnership programs, the Bechtel K-5 Educational Excellence Initiative, the NSF funded GK-12 Learning Partnership, and the ExxonMobil Meeker Partnership. In these partnerships, CSM graduate students in mathematics, science and engineering are placed in support of elementary and middle school teachers and their students for up to fifteen hours each week throughout the academic year.

To fully understand the behavior of graphene's electrons, Georgia Tech and NIST scientists employ the extremes of ultra-low temperature and large magnetic field.  In a new ultra-low temperature scanning tunneling microscope (ULT-STM) constructed at NIST, graphene remains pristine for weeks, enabling precise observations of electron energy levels and interactions.  Using multilayer epitaxial graphene prepared at Georgia Tech, the collaborato

Highly-symmetrized MnAu nanoalloys may possess high magnetic moments for potential application. The magnetic properties of MnAu nanoclusters exhibit strong dependence on the cluster sizes and morphologies.

IRG 3 has examined the orientational ordering of nematic liquid crystals (LCs) supported on organized monolayers of dipeptides with the goal of understanding how peptide-based interfaces encode intermolecular interactions that are amplified into supramolecular ordering.

  New technique produces heterojunctions in single-atom-thick graphene

On-chip optical modulation is one of the most important functionalities for integrated silicon photonic circuits. We demonstrate that sputter-deposited polycrystalline metallic thin films are promising materials for realizing ultra-low power modulators. Wafer-scale deposition of highly oriented metallic films allows CMOS-compatible, monolithic integration of active photonic elements on large scales.